egp10 a thru egp10m super fast rectifier reverse voltage: 50 to 1000 volts forward current:1.0ampere features mechanical data maximum ratings and electrical characteristics case : jedec do-41 molded plastic body terminals : plated axial leads, solderable per mil-std-750,method 2026 polarity : color band denotes cathode end mounting position : any weight : 0.012ounce, 0.34 gram note : 1.t est conditions: i f= 0.5a,i r =1.0a,i rr =0.25a. (rating at 25 c ambient temperature unless otherwise specified ,single phase ,half wave ,60h z ,resistive or inductive load. for capacitive load,derate current by 20%.) 2.measured at 1mh z and applied reverse voltage of 4.0 volts. gprc( glass passivated rectifier chip) inside glass passivated cavity-free junctionlow forward voltage drop,high current capability high surge current capability super fast recovery time plastic package has underwriters laboratory flammability classification 94v-0 maximum recurrent peak reverse voltage v rrm v rms v dc i (av) i fsm t stg v f i r c j maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 0.375"(9.5mm)lead length at t a =55 c maximum instantaneous forward voltage at 1.0 a operating junction and storage t emperature range maximum reverse recovery time(note1) t ypical junction capacitance(note2) maximum dc reverse current at rated dc blocking voltage peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+125 -65 to+150 50 35 50 25 5.0 t j 50 50 35 100 100 70 200 150 200 150 140 105 30.0 0.95 1.25 t rr 1.0 do-41 dimensions in inches and (millimeters) 0.205(5.20) 0.107(2.7) 0.034(0.85) 1.0(25.4) min 1.0(25.4) min 0.180(4.10) 0.080(2.0) dia 0.028(0.71) dia t a =25 c t a =100 c r semiconductor symbols v olts v olts v olts v olts a p f a mp a mps c ns units egp 10a egp 10b egp 10d egp 10f egp 10g egp 10j egp 10k egp 10m 400 400 280 800 800 280 1000 1000 280 600 600 280 s i l i c o n r e c t i f i e r jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com jf jf g p r c 8-4
ratings and characte ristic curves EGP10A thru egp10m 0.01 0.1 1.0 100 10 0.01 0.1 1 0 10 5 15 35 30 25 20 10 0 20 0 40 60 80 100 120 140 1 5 50 10 100 0.2 0.4 0.6 0.8 1.0 1.4 1.2 0 25 50 75 100 125 150 175 0 1.0 0.5 1.5 fig.2-typical forward current derating curve fig.5-maximum non-repetitive forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics a v e r a g e f o r w a r d c u r r e n t ( a ) i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t , ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) instantaneous forward v oltage (vol ts) reverse voltage. (v) set time base for 5/10 ns/cm percent of rated peak reverse volt age(%) number of cycles at 60hz ambient temperature ( c) 8.3ms single half sine-wave (jedec method) t j =25 c t j =100 c 1 0.1 0.5 1 5 2 10 50 20 1cm -0.25a 0 +0.5a -1.0a 100 25 75 100 175 150 50 125 fig.6-typical junction capacitance fig.1-test circuit diagram and reverse recovery time characteristic j u n c t i o n c a p a c i t a n c e ( p f ) t j =25 c single phase half wave 60hz resistive or inductive load0.375"(9.5mm) lead length pulse generator (note2) non inductive oscilloscope (note1) d.u.t. non inductive non in- ductive 50 50vdc (approx) 10 1 (-) (?) trr t a =25 c t a =25 c pulse width=300 s 1% duty cycle notes:1.rise time=7ns max. input impedance=1 megohm 22pf 2.rise time=10ns max. source impedance =50 ohms EGP10A-egp10g egp10j-egp10m EGP10A-egp10g egp10j-egp10m EGP10A-egp10f egp10g egp10j-egp10m s i l i c o n r e c t i f i e r jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com 8-5
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